september FDMS039N08B n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDMS039N08B rev. c2 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter ratings units v dss drain to source voltage 80 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c) 100 a - continuous (t a = 25 o c) (note 1) 19.4 i dm drain current - pulsed (note 2) 400 a e as single pulsed avalanche energy (note 3) 2 40 mj p d power dissipation (t c = 25 o c) 104 w (t a = 25 o c) (no te 1) 2.5 w t j , t stg operating and storage temperature range -55 to +150 o c symbol parameter ratings units r jc thermal resistance, junction to case 1.2 o c/w r ja thermal resistance, junction to ambient (note 1 ) 50 FDMS039N08B n-channel powertrench ? mosfet 80v, 100a, 3.9m features ? r ds(on) = 3.2m (typ.)@ v gs = 10v, i d = 50a ? low fom r ds(on) * q g ? low reverse recovery charge, q rr ? soft reverse recovery body diode ? enables highly efficiency in synchronous rectification ? fast switching speed ? 100% uil tested ? rohs compliant description this n-channel mosfet is produced using fairchild semic on- ductors advanced powertrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? synchronous rectification for server / telecom psu ? battery charger and battery protection circuit ? dc motor drives and uninterruptible power supplies ? micro solar inverter bottom power 56 top d d d d g s s s pin 1 gs s s d d d d 5 6 7 8 3 21 4 www.datasheet.net/ datasheet pdf - http://www..co.kr/
FDMS039N08B n-channel powertrench ? mosfet FDMS039N08B rev. c2 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quant ity FDMS039N08B FDMS039N08B power 56 13 12 mm 3000 units symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 80 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.04 - v/ o c i dss zero gate voltage drain current v ds = 64v, v gs = 0v - - 1 a i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2.5 - 4.5 v r ds(on) static drain to source on resistance v gs = 10v, i d = 50a - 3.2 3.9 m g fs forward transconductance v ds = 10v, i d = 50a (note 4) - 100 - s c iss input capacitance v ds = 40v, v gs = 0v f = 1mhz - 5715 7600 pf c oss output capacitance - 881 1170 pf c rss reverse transfer capacitance - 15 - pf c oss (er) engry releted output capacitance v ds = 40v, v gs = 0v - 1646 - pf q g(tot) total gate charge at 10v v ds = 40v, i d = 50a v gs = 0v to 10v (note 4,5) - 77 100 nc q gs gate to source gate charge - 34 - nc q gs2 gate charge threshold to plateau - 13 - nc q gd gate to drain miller charge - 16 - nc t d(on) turn-on delay time v dd = 40v, i d = 50a v gs = 10v, r gen = 4.7 (note 4,5) - 42 94 ns t r turn-on rise time - 25 60 ns t d(off) turn-off delay time - 48 106 ns t f turn-off fall time - 17 44 ns esr equivalent series resistance drain open, f = 1mhz - 1.2 - i s maximum continuous drain to source diode forward curr ent - - 100 a i sm maximum pulsed drain to source diode forward current - - 400 a v sd drain to source diode forward voltage v gs = 0v, i sd = 50a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd = 50a, v dd = 40v di f /dt = 100a/ s (note 4) - 68 - ns q rr reverse recovery charge - 80 - nc notes: 1.r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. repetitive rating: pulse width limited by maximum ju nction temperature 3. l = 0.3mh, i as = 40a, starting t j = 25 c 4. pulse test: pulse width 30 0 s, duty cycle 2.0% 5. essentially independent of operating temperature typ ical characteristics a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125 c/w when mounted on a minimum pad of 2 oz copper. www.datasheet.net/ datasheet pdf - http://www..co.kr/
FDMS039N08B n-channel powertrench ? mosfet FDMS039N08B rev. c2 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transf er characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 4 1 10 100 400 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 3 4 5 6 7 1 10 100 400 -55 o c 150 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 400 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 50 100 150 200 250 300 350 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [m ], drain-source on-resistance i d , drain current [a] 0.1 1 10 80 5 10 100 1000 10000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 20 40 60 80 0 2 4 6 8 10 *note: i d = 50a v ds = 16v v ds = 40v v ds = 64v v gs , gate-source voltage [v] q g , total gate charge [nc] www.datasheet.net/ datasheet pdf - http://www..co.kr/
FDMS039N08B n-channel powertrench ? mosfet FDMS039N08B rev. c2 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. ambient temperature figure 11. unclamped inductive figure 12. eoss vs. drain to source voltage switching capability -100 -50 0 50 100 150 200 0.94 0.96 1.00 1.04 1.08 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 *notes: 1. v gs = 10v 2. i d = 50a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0 20 40 60 80 100 120 i d , drain current [a] t c , case temperature [ o c] v gs =10v r jc =1.2 o c/w 0.1 1 10 100 0.01 0.1 1 10 100 1000 100ms 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e oss , [ j ] v ds , drain to source voltage [ v ] 0.01 0.1 1 10 100 1000 1 10 100 if r = 0 t av = (l) ( i as ) / ( 1.3*rated bv dss -v dd ) if r = 0 t av = (l/r)in [( i as *r ) / ( 1.3*rated bv dss -v dd ) +1 ] starting t j = 25 o c starting t j = 150 o c i as , avalanche current (a) t av , time in avalanche (ms) www.datasheet.net/ datasheet pdf - http://www..co.kr/
fdms039n03b n-channel powertrench ? mosfet FDMS039N08B rev. c2 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 13. transient thermal response curve 10 -3 10 -2 10 -1 1 10 100 1000 0.001 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *notes: 1. z ja (t) = 125 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z ja ] rectangular pulse duration [sec] t 1 p dm t 2 www.datasheet.net/ datasheet pdf - http://www..co.kr/
FDMS039N08B n-channel powertrench ? mosfet FDMS039N08B rev. c2 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms www.datasheet.net/ datasheet pdf - http://www..co.kr/
FDMS039N08B n-channel powertrench ? mosfet FDMS039N08B rev. c2 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- www.datasheet.net/ datasheet pdf - http://www..co.kr/
FDMS039N08B n-channel powertrench ? mosfet FDMS039N08B rev. c2 www.fairchildsemi.com 8 dimensional outline and pad layout www.datasheet.net/ datasheet pdf - http://www..co.kr/
FDMS039N08B n-channel powertrench ? mosfet FDMS039N08B rev. c2 www.fairchildsemi.com 9 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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uhc ? ultra frfet? unifet? vcx? visualmax? xs? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for pr oduct development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference infor mation only. anti-counterfeiting policy fairchild semiconductor corporations anti-counterf eiting policy. fairchilds anti-counterfeiting poli cy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semico nductor products are experiencing counterfeiting of their parts. customers who inadvertently purchase counter feit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and m anufacturing delays. fairchild is taking strong mea sures to protect ourselves and our customers from t he proliferation of counterfeit parts. fairchild stron gly encourages customers to purchase fairchild part s either directly from fairchild or from authorized fairchild distributors who are listed by country on our web p age cited above. products customers buy either from fairchild directly or from authorized fairchild distributors are genuine parts, have full traceabil ity, meet fairchilds quality standards for handing and storage and provide access to fairchilds full range of up-to-date technical and product information. fairc hild and our authorized distributors will stand beh ind all warranties and will appropriately address a nd warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance f or parts bought from unauthorized sources. fairchil d is committed to combat this global problem and encoura ge our customers to do their part in stopping this practice by buying direct or from authorized distri butors. rev. i55 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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